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BSZ110N06NS3GATMA1 - PG-TSDSON-8-34

BSZ110N06NS3GATMA1

Active
Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 60 V ; PQFN 3.3 X 3.3 PACKAGE; 11 MOHM;

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BSZ110N06NS3GATMA1 - PG-TSDSON-8-34

BSZ110N06NS3GATMA1

Active
Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 60 V ; PQFN 3.3 X 3.3 PACKAGE; 11 MOHM;

Technical Specifications

Parameters and characteristics for this part

SpecificationBSZ110N06NS3GATMA1
Current - Continuous Drain (Id) @ 25°C20 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds2700 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)50 W, 2.1 W
Rds On (Max) @ Id, Vgs11 mOhm
Supplier Device PackagePG-TSDSON-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.27
10$ 0.80
100$ 0.52
500$ 0.41
1000$ 0.37
2000$ 0.34
Digi-Reel® 1$ 1.27
10$ 0.80
100$ 0.52
500$ 0.41
1000$ 0.37
2000$ 0.34
Tape & Reel (TR) 5000$ 0.30
10000$ 0.28
LCSCPiece 1$ 0.54
10$ 0.53
30$ 0.52
100$ 0.51
NewarkEach 1$ 0.43
10$ 0.40
100$ 0.37
500$ 0.32
1000$ 0.29
2500$ 0.29

Description

General part information

BSZ110 Series

The BSZ110N06NS3 G is a 60V N-channel Power MOSFET optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers, desktops and tablet charger. Dramatically reduced gate charge and output charge enable high system efficiency and power density. The OptiMOS™ power MOSFET is ideally suited for high frequency switching and DC-DC converters.