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OPTIMOS™ 3 N-CHANNEL POWER MOSFET 60 V ; PQFN 3.3 X 3.3 PACKAGE; 11 MOHM;
| Part | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Mounting Type | Vgs (Max) | Technology | FET Type | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 2700 pF | 11 mOhm | Surface Mount | 20 V | MOSFET (Metal Oxide) | N-Channel | 20 A | 60 V | 10 V | 8-PowerVDFN | 2.1 W 50 W | 4 V | PG-TSDSON-8 | -55 °C | 150 °C | ||
Infineon Technologies | 1300 pF | 11 mOhm | Surface Mount | 20 V | MOSFET (Metal Oxide) | N-Channel | 80 V | 6 V 10 V | 8-PowerTDFN | 3.8 V | -55 °C | 150 °C | 50 W | 18.5 nC |