BSZ110N08NS5ATMA1

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Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; PQFN 3.3 X 3.3 PACKAGE; 11 MOHM;

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BSZ110N08NS5ATMA1

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Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; PQFN 3.3 X 3.3 PACKAGE; 11 MOHM;

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BSZ110N08NS5ATMA1

Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18.5 nC
Input Capacitance (Ciss) (Max) @ Vds	1300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max) [Max]	50 W
Rds On (Max) @ Id, Vgs	11 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.8 V

BSZ110 Series

Part	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs (Max)	Technology	FET Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies BSZ110N06NS3GATMA1	2700 pF	11 mOhm	Surface Mount	20 V	MOSFET (Metal Oxide)	N-Channel	20 A	60 V	10 V	8-PowerVDFN	2.1 W 50 W	4 V	PG-TSDSON-8	-55 °C	150 °C
Infineon Technologies BSZ110N08NS5ATMA1	1300 pF	11 mOhm	Surface Mount	20 V	MOSFET (Metal Oxide)	N-Channel		80 V	6 V 10 V	8-PowerTDFN		3.8 V		-55 °C	150 °C	50 W	18.5 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.64
		10	$ 1.04
		100	$ 0.70
		500	$ 0.55
		1000	$ 0.50
		2000	$ 0.46
	Digi-Reel®	1	$ 1.64
		10	$ 1.04
		100	$ 0.70
		500	$ 0.55
		1000	$ 0.50
		2000	$ 0.46
	Tape & Reel (TR)	5000	$ 0.42
		10000	$ 0.41
Newark	Each (Supplied on Full Reel)	5000	$ 0.42
		10000	$ 0.42

Description

General part information

BSZ110 Series

OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification fortelecomandserver power supplies. In addition, the device can also be utilized in other industrial applications such assolar,low voltage drivesandadapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on)reduction of up to 43%.

Documents

Technical documentation and resources