IPW65R110CFDFKSA2

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Infineon Technologies

MOSFET, N-CH, 650V, 31.2A, TO-247 ROHS COMPLIANT: YES

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Infineon Technologies

MOSFET, N-CH, 650V, 31.2A, TO-247 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	IPW65R110CFDFKSA2

Current - Continuous Drain (Id) @ 25°C	31.2 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	118 nC
Input Capacitance (Ciss) (Max) @ Vds	3240 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	277.8 W
Rds On (Max) @ Id, Vgs	110 mOhm
Supplier Device Package	PG-TO247-3-41
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Qualification
Infineon Technologies IPW65R110CFDFKSA1	118 nC	277.8 W	4.5 V	10 V	3240 pF	MOSFET (Metal Oxide)	20 V	31.2 A	N-Channel	Through Hole	PG-TO247-3-1	650 V	TO-247-3	110 mOhm	-55 °C	150 °C
Infineon Technologies IPW65R110CFDAFKSA1	118 nC	277.8 W	4.5 V	10 V	3240 pF	MOSFET (Metal Oxide)	20 V	31.2 A	N-Channel	Through Hole	PG-TO247-3	650 V	TO-247-3	110 mOhm	-40 °C	150 °C	Automotive	AEC-Q101
Infineon Technologies IPW65R110CFDFKSA2	118 nC	277.8 W	4.5 V	10 V	3240 pF	MOSFET (Metal Oxide)	20 V	31.2 A	N-Channel	Through Hole	PG-TO247-3-41	650 V	TO-247-3	110 mOhm	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO247-3-41

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