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COOLMOS™ CFD2 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-247 PACKAGE; 110 MOHM; FAST RECOVERY DIODE
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) [Max] | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Technology | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | FET Type | Mounting Type | Supplier Device Package | Drain to Source Voltage (Vdss) | Package / Case | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 118 nC | 277.8 W | 4.5 V | 10 V | 3240 pF | MOSFET (Metal Oxide) | 20 V | 31.2 A | N-Channel | Through Hole | PG-TO247-3-1 | 650 V | TO-247-3 | 110 mOhm | -55 °C | 150 °C | ||
Infineon Technologies | 118 nC | 277.8 W | 4.5 V | 10 V | 3240 pF | MOSFET (Metal Oxide) | 20 V | 31.2 A | N-Channel | Through Hole | PG-TO247-3 | 650 V | TO-247-3 | 110 mOhm | -40 °C | 150 °C | Automotive | AEC-Q101 |
Infineon Technologies | 118 nC | 277.8 W | 4.5 V | 10 V | 3240 pF | MOSFET (Metal Oxide) | 20 V | 31.2 A | N-Channel | Through Hole | PG-TO247-3-41 | 650 V | TO-247-3 | 110 mOhm | -55 °C | 150 °C |