IPW65R110CFDAFKSA1

Active

Infineon Technologies

650 V COOLMOS™ CFDA AUTOMOTIVE POWER MOSFET PG-TO247-3

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

IPW65R110CFDAFKSA1

Active

Infineon Technologies

650 V COOLMOS™ CFDA AUTOMOTIVE POWER MOSFET PG-TO247-3

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPW65R110CFDAFKSA1

Current - Continuous Drain (Id) @ 25°C	31.2 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	118 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	3240 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	277.8 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	110 mOhm
Supplier Device Package	PG-TO247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IPW65R110 Series

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Qualification
Infineon Technologies IPW65R110CFDFKSA1	118 nC	277.8 W	4.5 V	10 V	3240 pF	MOSFET (Metal Oxide)	20 V	31.2 A	N-Channel	Through Hole	PG-TO247-3-1	650 V	TO-247-3	110 mOhm	-55 °C	150 °C
Infineon Technologies IPW65R110CFDAFKSA1	118 nC	277.8 W	4.5 V	10 V	3240 pF	MOSFET (Metal Oxide)	20 V	31.2 A	N-Channel	Through Hole	PG-TO247-3	650 V	TO-247-3	110 mOhm	-40 °C	150 °C	Automotive	AEC-Q101
Infineon Technologies IPW65R110CFDFKSA2	118 nC	277.8 W	4.5 V	10 V	3240 pF	MOSFET (Metal Oxide)	20 V	31.2 A	N-Channel	Through Hole	PG-TO247-3-41	650 V	TO-247-3	110 mOhm	-55 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 6.91
		30	$ 4.55
Newark	Each	1	$ 9.09
		10	$ 8.49
		25	$ 6.08
		50	$ 5.73
		100	$ 5.38
		480	$ 5.37
		720	$ 4.97

Description

General part information

IPW65R110 Series

650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provides also an integrated fast body diode.

Documents

Technical documentation and resources