Technical Specifications
Parameters and characteristics for this part
| Specification | DMTH3004LPS-13 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 145 A, 22 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 43.7 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 2370 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 136 W, 3.2 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 3.8 mOhm |
| Supplier Device Package | PowerDI5060-8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | -16 V, 20 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 2500 | $ 0.46 | |
| 5000 | $ 0.43 | |||
| 7500 | $ 0.43 | |||
| 12500 | $ 0.43 | |||
Description
General part information
DMTH3004LFGQ Series
This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch.
Documents
Technical documentation and resources