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DMTH3004LFGQ-7 - Package Image for PowerDI3333-8

DMTH3004LFGQ-7

Active
Diodes Inc

TRANS MOSFET N-CH 30V 15A AUTOMOTIVE AEC-Q101 8-PIN POWERDI EP T/R

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Search across all available documentation for this part.

DMTH3004LFGQ-7 - Package Image for PowerDI3333-8

DMTH3004LFGQ-7

Active
Diodes Inc

TRANS MOSFET N-CH 30V 15A AUTOMOTIVE AEC-Q101 8-PIN POWERDI EP T/R

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMTH3004LFGQ-7
Current - Continuous Drain (Id) @ 25°C75 A, 15 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]44 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds2370 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)50 W, 2.5 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs [Max]5.5 mOhm
Supplier Device PackagePOWERDI3333-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)16 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 2000$ 0.25
6000$ 0.24
10000$ 0.23

Description

General part information

DMTH3004LFGQ Series

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch.