DMTH3004LFGQ Series

30V 175°C N-Channel Enhancement Mode MOSFET

Catalog

30V 175°C N-Channel Enhancement Mode MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs	FET Type	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Qualification	Vgs (Max)	Grade	Drive Voltage (Max Rds On, Min Rds On)	Technology	Supplier Device Package	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]
Diodes Inc DMTH3004LPS-13	43.7 nC	N-Channel	3 V	-55 °C	175 ░C	2370 pF	30 V	3.8 mOhm	3.2 W 136 W	AEC-Q101	-16 V 20 V	Automotive	4.5 V 10 V	MOSFET (Metal Oxide)	PowerDI5060-8	Surface Mount	22 A 145 A	8-PowerTDFN
Diodes Inc DMTH3004LFGQ-7		N-Channel	3 V	-55 °C	175 ░C	2370 pF	30 V		2.5 W 50 W	AEC-Q101	16 V	Automotive	4.5 V 10 V	MOSFET (Metal Oxide)	POWERDI3333-8	Surface Mount	15 A 75 A	8-PowerVDFN	44 nC	5.5 mOhm

Catalog

30V 175°C N-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C – Ideal for High Ambient Temperature Environments

• 100% Unclamped Inductive Switching (Test in Production) – Ensures More Reliable and Robust End Application

• Low RDS(ON) – Ensures On-State Losses are Minimized

• Excellent Qgd x RDS(ON) Product (FOM)

• Small Form Factor Thermally Efficient Package Enables Higher Density End Products

• Occupies just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product

• 100% UIS (Avalanche) Rated

• Totally Lead-Free & Fully RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• Qualified to AEC-Q101 Standards for High Reliability

• PPAP Capable

Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch.