IRS2101SPBF

Obsolete

Infineon Technologies

IC: DRIVER; MOSFET HALF-BRIDGE; HIGH-/LOW-SIDE,GATE DRIVER; SO8

Search across all available documentation for this part.

Obsolete

Infineon Technologies

IC: DRIVER; MOSFET HALF-BRIDGE; HIGH-/LOW-SIDE,GATE DRIVER; SO8

Technical Specifications

Parameters and characteristics for this part

Specification	IRS2101SPBF

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	290 mA
Current - Peak Output (Source, Sink) [custom]	600 mA
Driven Configuration	High-Side, Low-Side
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	2.5 V, 0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	35 ns
Rise / Fall Time (Typ) [custom]	70 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

Part	Package / Case	Package / Case [y]	Package / Case [x]	Mounting Type	Driven Configuration	Gate Type	Input Type	High Side Voltage - Max (Bootstrap) [Max]	Voltage - Supply [Max]	Voltage - Supply [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Logic Voltage - VIL, VIH	Channel Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Number of Drivers	Package / Case	Package / Case
Infineon Technologies IRS2101STRPBF	8-SOIC	3.9 mm	0.154 in	Surface Mount	High-Side Low-Side	IGBT N-Channel MOSFET	Non-Inverting	600 V	20 V	10 VDC	150 °C	-40 °C	8-SOIC	0.8 V 2.5 V	Independent	290 mA	600 mA	35 ns	70 ns	2
Infineon Technologies IRS2101SPBF	8-SOIC	3.9 mm	0.154 in	Surface Mount	High-Side Low-Side	IGBT N-Channel MOSFET	Non-Inverting	600 V	20 V	10 VDC	150 °C	-40 °C	8-SOIC	0.8 V 2.5 V	Independent	290 mA	600 mA	35 ns	70 ns	2
Infineon Technologies IRS2101PBF	8-DIP			Through Hole	High-Side Low-Side	IGBT N-Channel MOSFET	Non-Inverting	600 V	20 V	10 VDC	150 °C	-40 °C	8-PDIP	0.8 V 2.5 V	Independent	290 mA	600 mA	35 ns	70 ns	2	0.3 in	7.62 mm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Side or Low-Side Gate Driver IC Non-Inverting 8-SOIC

Technical documentation and resources