THE IRS2101S IS A 600 V HIGH AND LOW-SIDE GATE DRIVER IC (8 LEAD SOIC PACKAGE)
| Part | Package / Case | Package / Case [y] | Package / Case [x] | Mounting Type | Driven Configuration | Gate Type | Input Type | High Side Voltage - Max (Bootstrap) [Max] | Voltage - Supply [Max] | Voltage - Supply [Min] | Operating Temperature [Max] | Operating Temperature [Min] | Supplier Device Package | Logic Voltage - VIL, VIH | Channel Type | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Number of Drivers | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | High-Side Low-Side | IGBT N-Channel MOSFET | Non-Inverting | 600 V | 20 V | 10 VDC | 150 °C | -40 °C | 8-SOIC | 0.8 V 2.5 V | Independent | 290 mA | 600 mA | 35 ns | 70 ns | 2 | ||
Infineon Technologies | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | High-Side Low-Side | IGBT N-Channel MOSFET | Non-Inverting | 600 V | 20 V | 10 VDC | 150 °C | -40 °C | 8-SOIC | 0.8 V 2.5 V | Independent | 290 mA | 600 mA | 35 ns | 70 ns | 2 | ||
Infineon Technologies | 8-DIP | Through Hole | High-Side Low-Side | IGBT N-Channel MOSFET | Non-Inverting | 600 V | 20 V | 10 VDC | 150 °C | -40 °C | 8-PDIP | 0.8 V 2.5 V | Independent | 290 mA | 600 mA | 35 ns | 70 ns | 2 | 0.3 in | 7.62 mm |