IRS2101STRPBF

Active

Infineon Technologies

THE IRS2101S IS A 600 V HIGH AND LOW-SIDE GATE DRIVER IC (8 LEAD SOIC PACKAGE)

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet Technical Data Sheet EN

IRS2101STRPBF

Active

Infineon Technologies

THE IRS2101S IS A 600 V HIGH AND LOW-SIDE GATE DRIVER IC (8 LEAD SOIC PACKAGE)

Deep-Dive with AI

DocumentsDatasheet Technical Data Sheet EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRS2101STRPBF

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	290 mA
Current - Peak Output (Source, Sink) [custom]	600 mA
Driven Configuration	High-Side, Low-Side
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	2.5 V, 0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	35 ns
Rise / Fall Time (Typ) [custom]	70 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

IRS2101 Series

Part	Package / Case	Package / Case [y]	Package / Case [x]	Mounting Type	Driven Configuration	Gate Type	Input Type	High Side Voltage - Max (Bootstrap) [Max]	Voltage - Supply [Max]	Voltage - Supply [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Logic Voltage - VIL, VIH	Channel Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Number of Drivers	Package / Case	Package / Case
Infineon Technologies IRS2101STRPBF	8-SOIC	3.9 mm	0.154 in	Surface Mount	High-Side Low-Side	IGBT N-Channel MOSFET	Non-Inverting	600 V	20 V	10 VDC	150 °C	-40 °C	8-SOIC	0.8 V 2.5 V	Independent	290 mA	600 mA	35 ns	70 ns	2
Infineon Technologies IRS2101SPBF	8-SOIC	3.9 mm	0.154 in	Surface Mount	High-Side Low-Side	IGBT N-Channel MOSFET	Non-Inverting	600 V	20 V	10 VDC	150 °C	-40 °C	8-SOIC	0.8 V 2.5 V	Independent	290 mA	600 mA	35 ns	70 ns	2
Infineon Technologies IRS2101PBF	8-DIP			Through Hole	High-Side Low-Side	IGBT N-Channel MOSFET	Non-Inverting	600 V	20 V	10 VDC	150 °C	-40 °C	8-PDIP	0.8 V 2.5 V	Independent	290 mA	600 mA	35 ns	70 ns	2	0.3 in	7.62 mm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.01
		10	$ 1.28
		25	$ 1.09
		100	$ 0.87
		250	$ 0.77
		500	$ 0.70
		1000	$ 0.65
	Digi-Reel®	1	$ 2.01
		10	$ 1.28
		25	$ 1.09
		100	$ 0.87
		250	$ 0.77
		500	$ 0.70
		1000	$ 0.65
	Tape & Reel (TR)	2500	$ 0.59
		5000	$ 0.56
		7500	$ 0.54
		12500	$ 0.52
		17500	$ 0.51
Newark	Each (Supplied on Cut Tape)	1	$ 0.89
		10	$ 0.64
		25	$ 0.58
		50	$ 0.54
		100	$ 0.51
		250	$ 0.48
		500	$ 0.46
		1000	$ 0.44

Description

General part information

IRS2101 Series

EiceDRIVER™ 600 Vhigh and low side gate driver ICwith typical 0.29 A source and 0.6 A sink currents in 8 Lead SOIC packageIGBTsandMOSFETs. Also available in 8 Lead PDIP.