STGB10M65DF2

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STMicroelectronics

TRENCH GATE FIELD-STOP IGBT M SERIES, 650 V 10 A LOW LOSS

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DocumentsAN4544 TN1225 +10

STGB10M65DF2

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STMicroelectronics

TRENCH GATE FIELD-STOP IGBT M SERIES, 650 V 10 A LOW LOSS

Deep-Dive with AI

DocumentsAN4544 TN1225 +10

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STGB10M65DF2

Current - Collector (Ic) (Max)	20 A
Current - Collector Pulsed (Icm)	40 A
Gate Charge	28 nC
IGBT Type	Trench Field Stop
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power - Max [Max]	115 W
Reverse Recovery Time (trr)	96 ns
Supplier Device Package	TO-263 (D2PAK)
Switching Energy	270 µJ, 120 µJ
Td (on/off) @ 25°C	19 ns, 91 ns
Test Condition	400 V, 22 Ohm, 15 V, 10 A
Vce(on) (Max) @ Vge, Ic	2 V
Voltage - Collector Emitter Breakdown (Max)	650 V

STGB10NC60HD Series

Trench gate field-stop IGBT, H series 600 V, 10 A high speed

Part	Operating Temperature [Min]	Operating Temperature [Max]	Reverse Recovery Time (trr)	Switching Energy	Current - Collector Pulsed (Icm)	IGBT Type	Power - Max [Max]	Test Condition	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Vce(on) (Max) @ Vge, Ic	Package / Case	Current - Collector (Ic) (Max)	Mounting Type	Gate Charge	Td (on/off) @ 25°C	Voltage - Collector Emitter Breakdown (Max)
STMicroelectronics STGB10H60DF	-55 °C	175 ░C	107 ns	83 µJ 140 µJ	40 A	Trench Field Stop	115 W	10 A 10 Ohm 15 V 400 V	600 V	TO-263 (D2PAK)	1.95 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 A	Surface Mount	57 nC
STMicroelectronics STGB10M65DF2	-55 °C	175 ░C	96 ns	120 µJ 270 µJ	40 A	Trench Field Stop	115 W	10 A 15 V 22 Ohm 400 V		TO-263 (D2PAK)	2 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 A	Surface Mount	28 nC	19 ns 91 ns	650 V
STMicroelectronics STGB10NC60HDT4	-55 °C	150 °C	22 ns	31.8 µJ 95 µJ	30 A		65 W	5 A 10 Ohm 15 V 390 V	600 V	D2PAK	2.5 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 A	Surface Mount	19.2 nC	14.2 ns 72 ns
STMicroelectronics STGB10NB37LZT4	-65 °C	175 ░C		2.4 mJ 5 mJ	40 A			5 V 10 A 328 V 1000 Ohm		D2PAK	1.8 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 A	Surface Mount	28 nC	1.3 µs 8 µs	440 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.16
		10	$ 1.80
		100	$ 1.43
		500	$ 1.21
	Digi-Reel®	1	$ 2.16
		10	$ 1.80
		100	$ 1.43
		500	$ 1.21
	Tape & Reel (TR)	1000	$ 0.89
Newark	Each (Supplied on Cut Tape)	1	$ 3.46
		10	$ 2.44
		25	$ 2.24
		50	$ 2.05
		100	$ 1.85
		250	$ 1.72
		500	$ 1.59
		1000	$ 1.48

Description

General part information

STGB10NC60HD Series

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Documents

Technical documentation and resources

Datasheet

Product Change Notice EN

Datasheet

STGB10M65DF2

Deep-Dive with AI

STGB10M65DF2

Deep-Dive with AI

Technical Specifications

STGB10NC60HD Series

Pricing

Description

STGB10NC60HD Series

Documents

AN4544

TN1225

DS10849

TN1378

TN1224

AN4694

Datasheet

Product Change Notice EN

Datasheet

STGB10NC60HD Series