Technical Specifications
Parameters and characteristics for this part
| Specification | STGB10NB37LZT4 |
|---|---|
| Current - Collector (Ic) (Max) | 20 A |
| Current - Collector Pulsed (Icm) | 40 A |
| Gate Charge | 28 nC |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Supplier Device Package | D2PAK |
| Switching Energy | 2.4 mJ, 5 mJ |
| Td (on/off) @ 25°C | 8 µs, 1.3 µs |
| Test Condition | 10 A, 1000 Ohm, 328 V, 5 V |
| Vce(on) (Max) @ Vge, Ic | 1.8 V |
| Voltage - Collector Emitter Breakdown (Max) | 440 V |
STGB10NC60HD Series
Trench gate field-stop IGBT, H series 600 V, 10 A high speed
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Reverse Recovery Time (trr) | Switching Energy | Current - Collector Pulsed (Icm) | IGBT Type | Power - Max [Max] | Test Condition | Voltage - Collector Emitter Breakdown (Max) [Max] | Supplier Device Package | Vce(on) (Max) @ Vge, Ic | Package / Case | Current - Collector (Ic) (Max) | Mounting Type | Gate Charge | Td (on/off) @ 25°C | Voltage - Collector Emitter Breakdown (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | -55 °C | 175 ░C | 107 ns | 83 µJ 140 µJ | 40 A | Trench Field Stop | 115 W | 10 A 10 Ohm 15 V 400 V | 600 V | TO-263 (D2PAK) | 1.95 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 20 A | Surface Mount | 57 nC | ||
STMicroelectronics | -55 °C | 175 ░C | 96 ns | 120 µJ 270 µJ | 40 A | Trench Field Stop | 115 W | 10 A 15 V 22 Ohm 400 V | TO-263 (D2PAK) | 2 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 20 A | Surface Mount | 28 nC | 19 ns 91 ns | 650 V | |
STMicroelectronics | -55 °C | 150 °C | 22 ns | 31.8 µJ 95 µJ | 30 A | 65 W | 5 A 10 Ohm 15 V 390 V | 600 V | D2PAK | 2.5 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 20 A | Surface Mount | 19.2 nC | 14.2 ns 72 ns | ||
STMicroelectronics | -65 °C | 175 ░C | 2.4 mJ 5 mJ | 40 A | 5 V 10 A 328 V 1000 Ohm | D2PAK | 1.8 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 20 A | Surface Mount | 28 nC | 1.3 µs 8 µs | 440 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGB10NC60HD Series
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Documents
Technical documentation and resources