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STGB10H60DF - D²PAK

STGB10H60DF

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STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, H SERIES 600 V, 10 A HIGH SPEED

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STGB10H60DF - D²PAK

STGB10H60DF

Active
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, H SERIES 600 V, 10 A HIGH SPEED

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGB10H60DF
Current - Collector (Ic) (Max)20 A
Current - Collector Pulsed (Icm)40 A
Gate Charge57 nC
IGBT TypeTrench Field Stop
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power - Max [Max]115 W
Reverse Recovery Time (trr)107 ns
Supplier Device PackageTO-263 (D2PAK)
Switching Energy83 µJ, 140 µJ
Test Condition400 V, 10 A, 10 Ohm, 15 V
Vce(on) (Max) @ Vge, Ic1.95 V
Voltage - Collector Emitter Breakdown (Max) [Max]600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.82
10$ 1.51
100$ 1.20
500$ 1.02
Digi-Reel® 1$ 1.82
10$ 1.51
100$ 1.20
500$ 1.02
Tape & Reel (TR) 1000$ 0.76

Description

General part information

STGB10NC60HD Series

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.