IAUC120N04S6N006ATMA1

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Infineon Technologies

INFINEON’S IAUC120N04S6N006 IS A HIGH-EFFICIENCY POWER MOSFET WITH LOW RDS(ON) AND FAST SWITCHING. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

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DocumentsTechnical Data Sheet EN

IAUC120N04S6N006ATMA1

Active

Infineon Technologies

INFINEON’S IAUC120N04S6N006 IS A HIGH-EFFICIENCY POWER MOSFET WITH LOW RDS(ON) AND FAST SWITCHING. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

Deep-Dive with AI

DocumentsTechnical Data Sheet EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IAUC120N04S6N006ATMA1

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	40 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	151 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	10117 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	187 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	0.6 mOhm
Supplier Device Package	PG-TDSON-8-53
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

IAUC120 Series

Part	Qualification	Mounting Type	Supplier Device Package	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Grade	Technology	FET Type	Vgs (Max)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]
Infineon Technologies IAUC120N04S6L012ATMA1	AEC-Q101	Surface Mount	PG-TDSON-8	115 W	40 V	4.5 V 10 V	80 nC	4832 pF	1.21 mOhm	120 A	Automotive	MOSFET (Metal Oxide)	N-Channel	16 V	8-PowerTDFN	-55 °C	175 ░C	2 V
Infineon Technologies IAUC120N04S6L005ATMA1	AEC-Q101	Surface Mount	PG-TDSON-8-53	187 W	40 V	4.5 V 10 V		11203 pF		120 A	Automotive	MOSFET (Metal Oxide)	N-Channel	16 V	8-PowerTDFN	-55 °C	175 ░C	2 V	177 nC
Infineon Technologies IAUC120N04S6N006ATMA1	AEC-Q101	Surface Mount	PG-TDSON-8-53	187 W	40 V		151 nC	10117 pF		120 A	Automotive	MOSFET (Metal Oxide)	N-Channel	20 V	8-PowerTDFN	-55 °C	175 ░C	3 V		0.6 mOhm
Infineon Technologies IAUC120N06S5N017ATMA1	AEC-Q101	Surface Mount	PG-TDSON-8-43	167 W	60 V		95.9 nC	6952 pF	1.7 mOhm	120 A	Automotive	MOSFET (Metal Oxide)	N-Channel	20 V	8-PowerTDFN	-55 °C	175 ░C	3.4 V
Infineon Technologies IAUC120N04S6L009ATMA1	AEC-Q101	Surface Mount	PG-TDSON-8-34	150 W	40 V	4.5 V 10 V	128 nC	7806 pF	960 mOhm	150 A	Automotive	MOSFET (Metal Oxide)	N-Channel	16 V	8-PowerTDFN	-55 °C	175 ░C	2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.82
		10	$ 2.50
		100	$ 1.76
		500	$ 1.44
		1000	$ 1.34
		2000	$ 1.31
	Digi-Reel®	1	$ 3.82
		10	$ 2.50
		100	$ 1.76
		500	$ 1.44
		1000	$ 1.34
		2000	$ 1.31
	Tape & Reel (TR)	5000	$ 1.31
Newark	Each (Supplied on Cut Tape)	1	$ 2.42
		10	$ 1.73
		25	$ 1.57
		50	$ 1.40
		100	$ 1.24
		250	$ 1.12
		500	$ 1.01
		1000	$ 0.90

Description

General part information

IAUC120 Series

Say goodbye to old technology and unlock new levels of performance with Infineon's latest product,IAUCN04S7N005. Discover the enhanced efficiency and reliability of our newest technology withIAUCN04S7N005.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet