IAUC120 Series

Catalog

IAUC120N04S6L012 IS AN AUTOMOTIVE MOSFET OFFERING 40V, N-CH, 1.2 MΩ MAX, SSO8 (5X6), OPTIMOS™-6 FOR HIGH EFFICIENCY AND RELIABILITY.

Part	Qualification	Mounting Type	Supplier Device Package	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Grade	Technology	FET Type	Vgs (Max)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]
Infineon Technologies IAUC120N04S6L012ATMA1	AEC-Q101	Surface Mount	PG-TDSON-8	115 W	40 V	4.5 V 10 V	80 nC	4832 pF	1.21 mOhm	120 A	Automotive	MOSFET (Metal Oxide)	N-Channel	16 V	8-PowerTDFN	-55 °C	175 ░C	2 V
Infineon Technologies IAUC120N04S6L005ATMA1	AEC-Q101	Surface Mount	PG-TDSON-8-53	187 W	40 V	4.5 V 10 V		11203 pF		120 A	Automotive	MOSFET (Metal Oxide)	N-Channel	16 V	8-PowerTDFN	-55 °C	175 ░C	2 V	177 nC
Infineon Technologies IAUC120N04S6N006ATMA1	AEC-Q101	Surface Mount	PG-TDSON-8-53	187 W	40 V		151 nC	10117 pF		120 A	Automotive	MOSFET (Metal Oxide)	N-Channel	20 V	8-PowerTDFN	-55 °C	175 ░C	3 V		0.6 mOhm
Infineon Technologies IAUC120N06S5N017ATMA1	AEC-Q101	Surface Mount	PG-TDSON-8-43	167 W	60 V		95.9 nC	6952 pF	1.7 mOhm	120 A	Automotive	MOSFET (Metal Oxide)	N-Channel	20 V	8-PowerTDFN	-55 °C	175 ░C	3.4 V
Infineon Technologies IAUC120N04S6L009ATMA1	AEC-Q101	Surface Mount	PG-TDSON-8-34	150 W	40 V	4.5 V 10 V	128 nC	7806 pF	960 mOhm	150 A	Automotive	MOSFET (Metal Oxide)	N-Channel	16 V	8-PowerTDFN	-55 °C	175 ░C	2 V