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STB120N4F6 - D2Pak

STB120N4F6

Active
STMicroelectronics

N-CHANNEL 40 V, 3.5 MOHM TYP., 80 A STRIPFET F6 POWER MOSFET IN D2PAK PACKAGE

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DocumentsDatasheetDatasheet+15
STB120N4F6 - D2Pak

STB120N4F6

Active
STMicroelectronics

N-CHANNEL 40 V, 3.5 MOHM TYP., 80 A STRIPFET F6 POWER MOSFET IN D2PAK PACKAGE

Deep-Dive with AI

DocumentsDatasheetDatasheet+15

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB120N4F6
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]65 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]3850 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]110 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs4 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.33
10$ 1.93
100$ 1.54
500$ 1.30
Digi-Reel® 1$ 2.33
10$ 1.93
100$ 1.54
500$ 1.30
Tape & Reel (TR) 1000$ 1.11
2000$ 1.05
5000$ 1.01
10000$ 0.98

Description

General part information

STB120NF10T4 Series

These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.