STB120NF10T4 Series

N-channel 40 V, 3.5 mOhm typ., 80 A STripFET F6 Power MOSFET in D2PAK package

Catalog

N-channel 40 V, 3.5 mOhm typ., 80 A STripFET F6 Power MOSFET in D2PAK package

Part	Mounting Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Package / Case	Technology	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Qualification	Power Dissipation (Max) [Max]	Grade
STMicroelectronics STB120NF10T4	Surface Mount	100 V	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	312 W	10 V	5200 pF	N-Channel	10.5 mOhm	110 A	D2PAK	4 V	-55 °C	175 ░C	233 nC
STMicroelectronics STB120N4F6	Surface Mount	40 V	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)		10 V		N-Channel	4 mOhm		TO-263 (D2PAK)	4 V	-55 °C	175 ░C	65 nC	3850 pF	AEC-Q101	110 W	Automotive

Catalog

N-channel 40 V, 3.5 mOhm typ., 80 A STripFET F6 Power MOSFET in D2PAK package

Description

These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.