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STB120NF10T4 - TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STB120NF10T4

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STMicroelectronics

POWER MOSFET, N CHANNEL, 100 V, 110 A, 0.0105 OHM, TO-263 (D2PAK), SURFACE MOUNT

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STB120NF10T4 - TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STB120NF10T4

Active
STMicroelectronics

POWER MOSFET, N CHANNEL, 100 V, 110 A, 0.0105 OHM, TO-263 (D2PAK), SURFACE MOUNT

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Technical Specifications

Parameters and characteristics for this part

SpecificationSTB120NF10T4
Current - Continuous Drain (Id) @ 25°C110 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]233 nC
Input Capacitance (Ciss) (Max) @ Vds5200 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)312 W
Rds On (Max) @ Id, Vgs10.5 mOhm
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 4.59
10$ 3.86
100$ 3.12
500$ 2.77
Digi-Reel® 1$ 4.59
10$ 3.86
100$ 3.12
500$ 2.77
Tape & Reel (TR) 1000$ 2.15
NewarkEach (Supplied on Full Reel) 1$ 2.76
3000$ 2.64
6000$ 2.46
12000$ 2.29
18000$ 2.20
30000$ 2.16

Description

General part information

STB120NF10T4 Series

These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.