IPN60R1K5CEATMA1

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Infineon Technologies

MOSFET, N-CH, 600V, 5A, SOT-223-3

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Infineon Technologies

MOSFET, N-CH, 600V, 5A, SOT-223-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPN60R1K5CEATMA1

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	9.4 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	200 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	5 W
Rds On (Max) @ Id, Vgs	1.5 Ohm
Supplier Device Package	PG-SOT223-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Mounting Type	FET Type	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IPN60R1K5CEATMA1	MOSFET (Metal Oxide)	1.5 Ohm	3.5 V	9.4 nC	10 V	20 V	Surface Mount	N-Channel	PG-SOT223-3	150 °C	-40 °C	600 V	TO-261-4 TO-261AA	5 W	5 A	200 pF
Infineon Technologies IPN60R1K5PFD7SATMA1	MOSFET (Metal Oxide)	1.5 Ohm	4.5 V		10 V	20 V	Surface Mount	N-Channel	PG-SOT223-3	150 °C	-40 °C	600 V	TO-261-4 TO-261AA		3.6 A		6 W	169 pF	4.6 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 5A (Tc) 5W (Tc) Surface Mount PG-SOT223-3

Technical documentation and resources