IPN60R1K5PFD7SATMA1

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Infineon Technologies

COOLMOS™ PFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; SOT-223 PACKAGE; 1500 MOHM; PRICE/PERFORMANCE

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IPN60R1K5PFD7SATMA1

Active

Infineon Technologies

COOLMOS™ PFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; SOT-223 PACKAGE; 1500 MOHM; PRICE/PERFORMANCE

Deep-Dive with AI

DocumentsDatasheet Technical Data Sheet EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPN60R1K5PFD7SATMA1

Current - Continuous Drain (Id) @ 25°C	3.6 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	4.6 nC
Input Capacitance (Ciss) (Max) @ Vds	169 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max) [Max]	6 W
Rds On (Max) @ Id, Vgs	1.5 Ohm
Supplier Device Package	PG-SOT223-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IPN60R1 Series

Part	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Mounting Type	FET Type	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IPN60R1K5CEATMA1	MOSFET (Metal Oxide)	1.5 Ohm	3.5 V	9.4 nC	10 V	20 V	Surface Mount	N-Channel	PG-SOT223-3	150 °C	-40 °C	600 V	TO-261-4 TO-261AA	5 W	5 A	200 pF
Infineon Technologies IPN60R1K5PFD7SATMA1	MOSFET (Metal Oxide)	1.5 Ohm	4.5 V		10 V	20 V	Surface Mount	N-Channel	PG-SOT223-3	150 °C	-40 °C	600 V	TO-261-4 TO-261AA		3.6 A		6 W	169 pF	4.6 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.02
		10	$ 0.64
		100	$ 0.42
		500	$ 0.32
		1000	$ 0.29
	Digi-Reel®	1	$ 1.02
		10	$ 0.64
		100	$ 0.42
		500	$ 0.32
		1000	$ 0.29
	Tape & Reel (TR)	3000	$ 0.25
		6000	$ 0.23
		9000	$ 0.22
		15000	$ 0.21
Newark	Each (Supplied on Cut Tape)	1	$ 1.08
		10	$ 0.72
		25	$ 0.65
		50	$ 0.58
		100	$ 0.51
		250	$ 0.47
		500	$ 0.42
		1000	$ 0.39

Description

General part information

IPN60R1 Series

This 600V CoolMOS™ PFD7 superjunction MOSFET (IPN60R1K5PFD7S) complements theCoolMOS™7 offering for consumer applications. The IPN60R1K5PFD7S in a SOT-223 package features RDS(on)of 1,500mOhm resulting in low switching losses. The 600V CoolMOS™ PFD7 SJ MOSFETs come with an integrated fast body diode ensuring a robust device, reducing bill-of-material (BOM) for the customer. Infineon's industry-leading SMD packages further reduce PCB space and facilitate manufacturing. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency overCoolMOS™P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.