IPN60R1 Series

Catalog

MOSFET, N-CH, 600V, 5A, SOT-223-3

Part	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Mounting Type	FET Type	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IPN60R1K5CEATMA1	MOSFET (Metal Oxide)	1.5 Ohm	3.5 V	9.4 nC	10 V	20 V	Surface Mount	N-Channel	PG-SOT223-3	150 °C	-40 °C	600 V	TO-261-4 TO-261AA	5 W	5 A	200 pF
Infineon Technologies IPN60R1K5PFD7SATMA1	MOSFET (Metal Oxide)	1.5 Ohm	4.5 V		10 V	20 V	Surface Mount	N-Channel	PG-SOT223-3	150 °C	-40 °C	600 V	TO-261-4 TO-261AA		3.6 A		6 W	169 pF	4.6 nC