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BSD235CH6327XTSA1 - SOT-363 PKG

BSD235CH6327XTSA1

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Infineon Technologies

DUAL MOSFET, COMPLEMENTARY N AND P CHANNEL, 20 V, 20 V, 950 MA, 950 MA, 0.266 OHM

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BSD235CH6327XTSA1 - SOT-363 PKG

BSD235CH6327XTSA1

Active
Infineon Technologies

DUAL MOSFET, COMPLEMENTARY N AND P CHANNEL, 20 V, 20 V, 950 MA, 950 MA, 0.266 OHM

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationBSD235CH6327XTSA1
ConfigurationN and P-Channel
Current - Continuous Drain (Id) @ 25°C530 mA, 950 mA
Drain to Source Voltage (Vdss)20 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]0.34 nC
Input Capacitance (Ciss) (Max) @ Vds47 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-VSSOP, SC-88, SOT-363
Power - Max [Max]500 mW
Rds On (Max) @ Id, Vgs350 mOhm
Supplier Device PackagePG-SOT363-6-1
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 3000$ 0.07
DigikeyCut Tape (CT) 1$ 0.55
10$ 0.34
100$ 0.21
500$ 0.16
1000$ 0.14
Digi-Reel® 1$ 0.55
10$ 0.34
100$ 0.21
500$ 0.16
1000$ 0.14
Tape & Reel (TR) 3000$ 0.12
6000$ 0.11
9000$ 0.11
15000$ 0.10
21000$ 0.10
30000$ 0.09
75000$ 0.09
NewarkEach (Supplied on Cut Tape) 1$ 0.43
10$ 0.22
25$ 0.19
50$ 0.16
100$ 0.13
250$ 0.12
500$ 0.12

Description

General part information

BSD235 Series

Complementary power MOSFETs - an n-channel and a p-channel power MOSFET within the same package - are part of Infineon’s famous low voltage OptiMOS™ families, the market leader in high efficiency solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).

Documents

Technical documentation and resources