BSD235C L6327

Obsolete

Infineon Technologies

MOSFET N/P-CH 20V 0.95A SOT363

Search across all available documentation for this part.

Obsolete

Infineon Technologies

MOSFET N/P-CH 20V 0.95A SOT363

Technical Specifications

Parameters and characteristics for this part

Specification	BSD235C L6327

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	530 mA, 950 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	0.34 nC
Input Capacitance (Ciss) (Max) @ Vds	47 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-VSSOP, SC-88, SOT-363
Power - Max [Max]	500 mW
Rds On (Max) @ Id, Vgs	350 mOhm
Supplier Device Package	PG-SOT363-PO
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.2 V

Part	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Feature	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs(th) (Max) @ Id	Technology
Infineon Technologies BSD235C L6327	500 mW	-55 °C	150 °C	N and P-Channel	PG-SOT363-PO	20 V	350 mOhm	6-VSSOP SC-88 SOT-363	47 pF	0.34 nC	Logic Level Gate	530 mA 950 mA	Surface Mount	1.2 V	MOSFET (Metal Oxide)
Infineon Technologies BSD235CH6327XTSA1	500 mW	-55 °C	150 °C	N and P-Channel	PG-SOT363-6-1	20 V	350 mOhm	6-VSSOP SC-88 SOT-363	47 pF	0.34 nC	Logic Level Gate	530 mA 950 mA	Surface Mount	1.2 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 20V 950mA, 530mA 500mW Surface Mount PG-SOT363-PO

Technical documentation and resources