MOSFET N/P-CH 20V 0.95A SOT363
| Part | Power - Max [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Configuration | Supplier Device Package | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Feature | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Vgs(th) (Max) @ Id | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 500 mW | -55 °C | 150 °C | N and P-Channel | PG-SOT363-PO | 20 V | 350 mOhm | 6-VSSOP SC-88 SOT-363 | 47 pF | 0.34 nC | Logic Level Gate | 530 mA 950 mA | Surface Mount | 1.2 V | MOSFET (Metal Oxide) |
Infineon Technologies | 500 mW | -55 °C | 150 °C | N and P-Channel | PG-SOT363-6-1 | 20 V | 350 mOhm | 6-VSSOP SC-88 SOT-363 | 47 pF | 0.34 nC | Logic Level Gate | 530 mA 950 mA | Surface Mount | 1.2 V | MOSFET (Metal Oxide) |