BAT1502ELSE6327XTSA1

Infineon Technologies

RF DIODES

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BAT1502ELSE6327XTSA1

Infineon Technologies

RF DIODES

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BAT1502ELSE6327XTSA1

Package / Case	0603 Metric
Package / Case	0201
Supplier Device Package	PG-TSSLP-2-3

BAT1502 Series

Part	Supplier Device Package	Current - Max [Max]	Diode Type	Package / Case	Operating Temperature	Power Dissipation (Max) [Max]	Voltage - Peak Reverse (Max) [Max]	Package / Case
Infineon Technologies BAT1502LRHE6327XTSA1	PG-TSLP-2-7	110 mA	Schottky - Single	SOD-882	150 °C	100 mW	4 V
Infineon Technologies BAT1502ELE6327XTMA1	PG-TSLP-2-19	110 mA	Schottky - Single	0402 (1006 Metric)	150 °C	100 mW	4 V
Infineon Technologies BAT1502ELSE6327XTSA1	PG-TSSLP-2-3			0201				0603 Metric

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	15000	$ 0.14
		30000	$ 0.14

Description

General part information

BAT1502 Series

This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-02ELS a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.

Documents

Technical documentation and resources