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BAT1502ELE6327XTMA1 - INFINEON BAT1502ELE6327XTMA1

BAT1502ELE6327XTMA1

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Infineon Technologies

RF SCHOTTKY DIODE, SINGLE, 4 V, 110 MA, 410 MV, 0.35 PF, TSLP-2-19

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BAT1502ELE6327XTMA1 - INFINEON BAT1502ELE6327XTMA1

BAT1502ELE6327XTMA1

Active
Infineon Technologies

RF SCHOTTKY DIODE, SINGLE, 4 V, 110 MA, 410 MV, 0.35 PF, TSLP-2-19

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationBAT1502ELE6327XTMA1
Current - Max [Max]110 mA
Diode TypeSchottky - Single
Operating Temperature150 °C
Package / Case0402 (1006 Metric)
Power Dissipation (Max) [Max]100 mW
Supplier Device PackagePG-TSLP-2-19
Voltage - Peak Reverse (Max) [Max]4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.59
10$ 0.51
100$ 0.35
500$ 0.29
1000$ 0.25
2000$ 0.22
5000$ 0.21
Digi-Reel® 1$ 0.59
10$ 0.51
100$ 0.35
500$ 0.29
1000$ 0.25
2000$ 0.22
5000$ 0.21
Tape & Reel (TR) 15000$ 0.20
30000$ 0.19
NewarkEach (Supplied on Cut Tape) 1$ 0.63
10$ 0.44
25$ 0.42
50$ 0.40
100$ 0.38
250$ 0.34
500$ 0.31
1000$ 0.26

Description

General part information

BAT1502 Series

This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-02EL a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.

Documents

Technical documentation and resources