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BAT1502LRHE6327XTSA1 - PG-TSLP-2-7

BAT1502LRHE6327XTSA1

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Infineon Technologies

RF DIODE SCHOTTKY 4V 100MW TSLP2

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Search across all available documentation for this part.

BAT1502LRHE6327XTSA1 - PG-TSLP-2-7

BAT1502LRHE6327XTSA1

Active
Infineon Technologies

RF DIODE SCHOTTKY 4V 100MW TSLP2

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBAT1502LRHE6327XTSA1
Current - Max [Max]110 mA
Diode TypeSchottky - Single
Operating Temperature150 °C
Package / CaseSOD-882
Power Dissipation (Max) [Max]100 mW
Supplier Device PackagePG-TSLP-2-7
Voltage - Peak Reverse (Max) [Max]4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.17
10$ 0.79
100$ 0.63
500$ 0.49
1000$ 0.44
2000$ 0.43
5000$ 0.37
Digi-Reel® 1$ 1.17
10$ 0.79
100$ 0.63
500$ 0.49
1000$ 0.44
2000$ 0.43
5000$ 0.37
Tape & Reel (TR) 15000$ 0.37
NewarkEach (Supplied on Cut Tape) 1$ 0.63
10$ 0.57
25$ 0.54
50$ 0.52
100$ 0.49
250$ 0.47
500$ 0.45
1000$ 0.39

Description

General part information

BAT1502 Series

Infineon RF Schottky Diode is a silicon low barrier N-type of device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage diode and low junction capacitance, make BAT 15 - 02 LRH a suitable choice for mixer and detector functions in applications whose frequencies are as high as 12 GHz.

Documents

Technical documentation and resources