DRV8770RGER
ActiveIC HALF BRIDGE DRVR 1.5A 24VQFN
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DRV8770RGER
ActiveIC HALF BRIDGE DRVR 1.5A 24VQFN
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Technical Specifications
Parameters and characteristics for this part
| Specification | DRV8770RGER |
|---|---|
| Applications | DC Motors, General Purpose |
| Current - Output / Channel | 1.5 A |
| Current - Peak Output | 1.5 A |
| Fault Protection | Shoot-Through |
| Interface | PWM, Logic, Analog |
| Load Type | Resistive, Capacitive, Inductive |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 24-VFQFN Exposed Pad |
| Supplier Device Package | 24-VQFN (4x4) |
| Technology | NMOS, Power MOSFET |
| Voltage - Load [Max] | 20 V |
| Voltage - Load [Min] | 5 V |
| Voltage - Supply [Max] | 20 V |
| Voltage - Supply [Min] | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
DRV8770 Series
100V H-bridge gate driver
| Part | Voltage - Supply [Max] | Voltage - Supply [Min] | Mounting Type | Fault Protection | Operating Temperature [Max] | Operating Temperature [Min] | Current - Output / Channel | Applications | Interface | Supplier Device Package | Package / Case | Current - Peak Output | Voltage - Load [Max] | Voltage - Load [Min] | Technology | Load Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments DRV8770RGERThe DRV8770 device provides two half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The integrated bootstrap diode and external capacitor generate the correct gate drive voltages for the high-side MOSFETs while the GVDD drives the gates of the low-side MOSFETs. The gate drive architecture supports gate drive currents up to 750-mA source and 1.5-A sink.
The high voltage tolerance of the gate drive pins improves system robustness. The SHx phase pins can tolerate significant negative voltage transients, while the high-side gate driver supply can support higher positive voltage transients (115-V absolute maximum) on the BSTx and GHx pins. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high side through GVDD and BST undervoltage lockout.
The DRV8770 device provides two half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The integrated bootstrap diode and external capacitor generate the correct gate drive voltages for the high-side MOSFETs while the GVDD drives the gates of the low-side MOSFETs. The gate drive architecture supports gate drive currents up to 750-mA source and 1.5-A sink.
The high voltage tolerance of the gate drive pins improves system robustness. The SHx phase pins can tolerate significant negative voltage transients, while the high-side gate driver supply can support higher positive voltage transients (115-V absolute maximum) on the BSTx and GHx pins. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high side through GVDD and BST undervoltage lockout. | 20 V | 5 V | Surface Mount | Shoot-Through | 150 C | -40 °C | 1.5 A | DC Motors, General Purpose | Analog, Logic, PWM | 24-VQFN (4x4) | 24-VFQFN Exposed Pad | 1.5 A | 20 V | 5 V | NMOS, Power MOSFET | Capacitive, Inductive, Resistive |
Description
General part information
DRV8770 Series
The DRV8770 device provides two half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The integrated bootstrap diode and external capacitor generate the correct gate drive voltages for the high-side MOSFETs while the GVDD drives the gates of the low-side MOSFETs. The gate drive architecture supports gate drive currents up to 750-mA source and 1.5-A sink.
The high voltage tolerance of the gate drive pins improves system robustness. The SHx phase pins can tolerate significant negative voltage transients, while the high-side gate driver supply can support higher positive voltage transients (115-V absolute maximum) on the BSTx and GHx pins. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high side through GVDD and BST undervoltage lockout.
The DRV8770 device provides two half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The integrated bootstrap diode and external capacitor generate the correct gate drive voltages for the high-side MOSFETs while the GVDD drives the gates of the low-side MOSFETs. The gate drive architecture supports gate drive currents up to 750-mA source and 1.5-A sink.