IPN60R360PFD7SATMA1

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Infineon Technologies

COOLMOS™ PFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; SOT-223 PACKAGE; 360 MOHM; PRICE/PERFORMANCE

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IPN60R360PFD7SATMA1

Active

Infineon Technologies

COOLMOS™ PFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; SOT-223 PACKAGE; 360 MOHM; PRICE/PERFORMANCE

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DocumentsDatasheet Technical Data Sheet EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPN60R360PFD7SATMA1

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	12.7 nC
Input Capacitance (Ciss) (Max) @ Vds	534 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-261-3
Power Dissipation (Max) [Max]	7 W
Rds On (Max) @ Id, Vgs	360 mOhm
Supplier Device Package	PG-SOT223-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IPN60R Series

Part	Rds On (Max) @ Id, Vgs	FET Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies IPN60R360P7SATMA1	360 mOhm	N-Channel	MOSFET (Metal Oxide)	555 pF	Surface Mount	13 nC	20 V	9 A	600 V	150 °C	-40 °C	10 V	PG-SOT223	4 V	7 W	TO-261-4 TO-261AA
Infineon Technologies IPN60R1K0PFD7SATMA1	1 Ohm	N-Channel	MOSFET (Metal Oxide)		Surface Mount		20 V	4.7 A	600 V	150 °C	-40 °C	10 V	PG-SOT223-4	4.5 V	6 W	TO-261-4 TO-261AA	6 nC	230 pF
Infineon Technologies IPN60R360PFD7SATMA1	360 mOhm	N-Channel	MOSFET (Metal Oxide)	534 pF	Surface Mount		20 V	10 A	600 V	150 °C	-40 °C	10 V	PG-SOT223-3-1	4.5 V	7 W	TO-261-3	12.7 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.16
		10	$ 0.73
		100	$ 0.49
		500	$ 0.40
	Digi-Reel®	1	$ 1.16
		10	$ 0.73
		100	$ 0.49
		500	$ 0.40
	Tape & Reel (TR)	3000	$ 0.40
Newark	Each (Supplied on Cut Tape)	1	$ 0.93
		10	$ 0.89
		25	$ 0.83
		50	$ 0.78
		100	$ 0.73
		250	$ 0.70
		500	$ 0.67
		1000	$ 0.64

Description

General part information

IPN60R Series

This 600V CoolMOS™ PFD7 superjunction MOSFET (IPN60R360PFD7S) complements theCoolMOS™7 offering for consumer applications. The IPN60R360PFD7S in a SOT-223 package features RDS(on)of 360mOhm resulting in low switching losses. The 600V CoolMOS™ PFD7 SJ MOSFETs come with an integrated fast body diode ensuring a robust device, reducing bill-of-material (BOM) for the customer. Infineon's industry-leading SMD packages further reduce PCB space and facilitate manufacturing. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency overCoolMOS™P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.