IPN60R Series

Catalog

MOSFET N-CHANNEL 600V 9A SOT223

Part	Rds On (Max) @ Id, Vgs	FET Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies IPN60R360P7SATMA1	360 mOhm	N-Channel	MOSFET (Metal Oxide)	555 pF	Surface Mount	13 nC	20 V	9 A	600 V	150 °C	-40 °C	10 V	PG-SOT223	4 V	7 W	TO-261-4 TO-261AA
Infineon Technologies IPN60R1K0PFD7SATMA1	1 Ohm	N-Channel	MOSFET (Metal Oxide)		Surface Mount		20 V	4.7 A	600 V	150 °C	-40 °C	10 V	PG-SOT223-4	4.5 V	6 W	TO-261-4 TO-261AA	6 nC	230 pF
Infineon Technologies IPN60R360PFD7SATMA1	360 mOhm	N-Channel	MOSFET (Metal Oxide)	534 pF	Surface Mount		20 V	10 A	600 V	150 °C	-40 °C	10 V	PG-SOT223-3-1	4.5 V	7 W	TO-261-3	12.7 nC