IPN60R360P7SATMA1

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Infineon Technologies

MOSFET N-CHANNEL 600V 9A SOT223

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Infineon Technologies

MOSFET N-CHANNEL 600V 9A SOT223

Technical Specifications

Parameters and characteristics for this part

Specification	IPN60R360P7SATMA1

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13 nC
Input Capacitance (Ciss) (Max) @ Vds	555 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max) [Max]	7 W
Rds On (Max) @ Id, Vgs	360 mOhm
Supplier Device Package	PG-SOT223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs	FET Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies IPN60R360P7SATMA1	360 mOhm	N-Channel	MOSFET (Metal Oxide)	555 pF	Surface Mount	13 nC	20 V	9 A	600 V	150 °C	-40 °C	10 V	PG-SOT223	4 V	7 W	TO-261-4 TO-261AA
Infineon Technologies IPN60R1K0PFD7SATMA1	1 Ohm	N-Channel	MOSFET (Metal Oxide)		Surface Mount		20 V	4.7 A	600 V	150 °C	-40 °C	10 V	PG-SOT223-4	4.5 V	6 W	TO-261-4 TO-261AA	6 nC	230 pF
Infineon Technologies IPN60R360PFD7SATMA1	360 mOhm	N-Channel	MOSFET (Metal Oxide)	534 pF	Surface Mount		20 V	10 A	600 V	150 °C	-40 °C	10 V	PG-SOT223-3-1	4.5 V	7 W	TO-261-3	12.7 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 9A (Tc) 7W (Tc) Surface Mount PG-SOT223

Technical documentation and resources