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DMN2024UDH-7 - Package Image for U-DFN3030-8

DMN2024UDH-7

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Diodes Inc

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN2024UDH-7 - Package Image for U-DFN3030-8

DMN2024UDH-7

Active
Diodes Inc

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN2024UDH-7
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C5.2 A
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs7.1 nC
Input Capacitance (Ciss) (Max) @ Vds647 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerUDFN
Power - Max [Max]950 mW
Rds On (Max) @ Id, Vgs23 mOhm
Supplier Device PackageU-DFN3030-8
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 3000$ 0.20
6000$ 0.19
9000$ 0.18
15000$ 0.17
21000$ 0.16

Description

General part information

DMN2024UFDF Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications.