DMN2024UQ-13
ActiveDiodes Inc
N-CHANNEL ENHANCEMENT MODE MOSFET
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DMN2024UQ-13
ActiveDiodes Inc
N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN2024UQ-13 |
|---|---|
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 1.8 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 6.5 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 647 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power Dissipation (Max) [Max] | 800 mW |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 25 mOhm |
| Supplier Device Package | SOT-23-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 10 V |
| Vgs(th) (Max) @ Id | 900 mV |
DMN2024UFDF Series
Dual N-Channel Enhancement Mode MOSFET
| Part | Package / Case | Mounting Type | Supplier Device Package | Vgs (Max) | Power Dissipation (Max) [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Technology | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Qualification | Input Capacitance (Ciss) (Max) @ Vds | Grade | Gate Charge (Qg) (Max) @ Vgs | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Power - Max [Max] | Configuration | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | SC-59 SOT-23-3 TO-236-3 | Surface Mount | SOT-23-3 | 10 V | 800 mW | -55 °C | 150 °C | 25 mOhm | 900 mV | MOSFET (Metal Oxide) | 1.8 V 4.5 V | 20 V | AEC-Q101 | 647 pF | Automotive | 6.5 nC | N-Channel | ||||
Diodes Inc | SC-59 SOT-23-3 TO-236-3 | Surface Mount | SOT-23-3 | 10 V | 800 mW | -55 °C | 150 °C | 25 mOhm | 900 mV | MOSFET (Metal Oxide) | 1.8 V 4.5 V | 20 V | 647 pF | N-Channel | 7.1 nC | ||||||
Diodes Inc | SOT-23-6 Thin TSOT-23-6 | Surface Mount | TSOT-23-6 | -55 °C | 150 °C | 24 mOhm | 900 mV | MOSFET (Metal Oxide) | 20 V | 647 pF | 7.1 nC | 1 W | 2 N-Channel (Dual) Common Drain | 7 A | |||||||
Diodes Inc | 6-UDFN Exposed Pad | Surface Mount | U-DFN2020-6 (Type F) | 10 V | 960 mW | -55 °C | 150 °C | 22 mOhm | 1 V | MOSFET (Metal Oxide) | 1.5 V 4.5 V | 20 V | 647 pF | N-Channel | 0.9 nC | 7.1 A | |||||
Diodes Inc | 8-PowerUDFN | Surface Mount | U-DFN3030-8 | -55 °C | 150 °C | 23 mOhm | 1 V | MOSFET (Metal Oxide) | 20 V | 647 pF | 7.1 nC | 950 mW | 2 N-Channel (Dual) | 5.2 A | |||||||
Diodes Inc | 6-UDFN Exposed Pad | Surface Mount | U-DFN2020-6 (Type F) | 10 V | 960 mW | -55 °C | 150 °C | 22 mOhm | 1 V | MOSFET (Metal Oxide) | 1.5 V 4.5 V | 20 V | 647 pF | N-Channel | 0.9 nC | 7.1 A | |||||
Diodes Inc | SC-59 SOT-23-3 TO-236-3 | Surface Mount | SOT-23-3 | 10 V | 800 mW | -55 °C | 150 °C | 25 mOhm | 900 mV | MOSFET (Metal Oxide) | 1.8 V 4.5 V | 20 V | 647 pF | N-Channel | 7.1 nC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 10000 | $ 0.10 | |
| 30000 | $ 0.10 | |||
| 50000 | $ 0.09 | |||
Description
General part information
DMN2024UFDF Series
This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications.
Documents
Technical documentation and resources