
DMN2024UVT-13
ActiveDiodes Inc
N-CHANNEL ENHANCEMENT MODE MOSFET
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DMN2024UVT-13
ActiveDiodes Inc
N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN2024UVT-13 |
|---|---|
| Configuration | 2 N-Channel (Dual) Common Drain |
| Current - Continuous Drain (Id) @ 25°C | 7 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.1 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 647 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TSOT-23-6, SOT-23-6 Thin |
| Power - Max [Max] | 1 W |
| Rds On (Max) @ Id, Vgs | 24 mOhm |
| Supplier Device Package | TSOT-23-6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 900 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 10000 | $ 0.14 | |
| 20000 | $ 0.13 | |||
| 30000 | $ 0.13 | |||
Description
General part information
DMN2024UFDF Series
This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications.
Documents
Technical documentation and resources