WNSC6D04650Q

WeEn Semiconductors

DIODE SIL CARB 650V 4A TO220AC

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WeEn Semiconductors

DIODE SIL CARB 650V 4A TO220AC

Pricing

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Distributor	Package	Quantity	$

Digikey	Tube	3000	$ 0.75

General part information

Diode 650 V 4A Through Hole TO-220AC

Technical documentation and resources

No documents available

Parameters and characteristics commom to parts in this series

Specification	WNSC6D04650Q	WNSC6 Series

Capacitance @ Vr, F	233 pF	130 - 780 pF
Current - Average Rectified (Io)	4 A	1 - 16 A
Current - Average Rectified (Io) (per Diode)	-	20 A
Current - Reverse Leakage @ Vr	30 µA	20 - 80 µA
Diode Configuration	-	1 Pair Common Cathode
Mounting Type	Through Hole	Surface Mount, Through Hole
Operating Temperature - Junction	175 °C	175 °C
Package / Case	TO-220-2	SMB, DO-214AA, D2PAK (2 Leads + Tab), TO-263AB, TO-263-3, TO-247-3, TO-220-2
Reverse Recovery Time (trr)	0 ns	0 ns
Speed	No Recovery Time	No Recovery Time
Supplier Device Package	TO-220AC	SMB, D2PAK, TO-247-3, TO-220AC
Technology	SiC (Silicon Carbide) Schottky	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V	650 V
Voltage - Forward (Vf) (Max) @ If	1.4 V	1.4 - 1.55 V

DIODE SIL CARBIDE 650V 1A SMB

Part	Operating Temperature - Junction	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Current - Average Rectified (Io)	Package / Case	Speed	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Diode Configuration	Current - Average Rectified (Io) (per Diode)
WeEn Semiconductors WNSC6D01650MBJ	175 °C	650 V	SiC (Silicon Carbide) Schottky	1 A	DO-214AA, SMB	No Recovery Time	Surface Mount	1.4 V	SMB	130 pF	20 µA
WeEn Semiconductors WNSC6D20650B6J	175 °C	650 V	SiC (Silicon Carbide) Schottky		D2PAK (2 Leads + Tab), TO-263-3, TO-263AB	No Recovery Time	Surface Mount	1.55 V	D2PAK	780 pF	80 µA
WeEn Semiconductors WNSC6D20650CW6Q	175 °C	650 V	SiC (Silicon Carbide) Schottky		TO-247-3	No Recovery Time	Through Hole	1.45 V	TO-247-3		50 µA	1 Pair Common Cathode	20 A
WeEn Semiconductors WNSC6D166506Q	175 °C	650 V	SiC (Silicon Carbide) Schottky	16 A	TO-220-2	No Recovery Time	Through Hole	1.45 V	TO-220AC	780 pF	80 µA
WeEn Semiconductors WNSC6D16650B6J	175 °C	650 V	SiC (Silicon Carbide) Schottky	16 A	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB	No Recovery Time	Surface Mount	1.45 V	D2PAK	780 pF	80 µA
WeEn Semiconductors WNSC6D04650Q	175 °C	650 V	SiC (Silicon Carbide) Schottky	4 A	TO-220-2	No Recovery Time	Through Hole	1.4 V	TO-220AC	233 pF	30 µA
WeEn Semiconductors WNSC6D16650CW6Q	175 °C	650 V	SiC (Silicon Carbide) Schottky	16 A	TO-247-3	No Recovery Time	Through Hole	1.45 V	TO-247-3	780 pF	80 µA