WNSC6 Series

Catalog

DIODE SIL CARBIDE 650V 1A SMB

Part	Operating Temperature - Junction	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Current - Average Rectified (Io)	Package / Case	Speed	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Diode Configuration	Current - Average Rectified (Io) (per Diode)
WeEn Semiconductors WNSC6D01650MBJ	175 °C	650 V	SiC (Silicon Carbide) Schottky	1 A	DO-214AA, SMB	No Recovery Time	Surface Mount	1.4 V	SMB	130 pF	20 µA
WeEn Semiconductors WNSC6D20650B6J	175 °C	650 V	SiC (Silicon Carbide) Schottky		D2PAK (2 Leads + Tab), TO-263-3, TO-263AB	No Recovery Time	Surface Mount	1.55 V	D2PAK	780 pF	80 µA
WeEn Semiconductors WNSC6D20650CW6Q	175 °C	650 V	SiC (Silicon Carbide) Schottky		TO-247-3	No Recovery Time	Through Hole	1.45 V	TO-247-3		50 µA	1 Pair Common Cathode	20 A
WeEn Semiconductors WNSC6D166506Q	175 °C	650 V	SiC (Silicon Carbide) Schottky	16 A	TO-220-2	No Recovery Time	Through Hole	1.45 V	TO-220AC	780 pF	80 µA
WeEn Semiconductors WNSC6D16650B6J	175 °C	650 V	SiC (Silicon Carbide) Schottky	16 A	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB	No Recovery Time	Surface Mount	1.45 V	D2PAK	780 pF	80 µA
WeEn Semiconductors WNSC6D04650Q	175 °C	650 V	SiC (Silicon Carbide) Schottky	4 A	TO-220-2	No Recovery Time	Through Hole	1.4 V	TO-220AC	233 pF	30 µA
WeEn Semiconductors WNSC6D16650CW6Q	175 °C	650 V	SiC (Silicon Carbide) Schottky	16 A	TO-247-3	No Recovery Time	Through Hole	1.45 V	TO-247-3	780 pF	80 µA