BSC009NE2LSATMA1

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Infineon Technologies

OPTIMOS™ N-CHANNEL POWER MOSFET 25 V ; SUPERSO8 5X6 PACKAGE; 0.9 MOHM; WIDE SOA

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DocumentsApplication Note EN

BSC009NE2LSATMA1

Active

Infineon Technologies

OPTIMOS™ N-CHANNEL POWER MOSFET 25 V ; SUPERSO8 5X6 PACKAGE; 0.9 MOHM; WIDE SOA

Deep-Dive with AI

DocumentsApplication Note EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BSC009NE2LSATMA1

Current - Continuous Drain (Id) @ 25°C	41 A
Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	126 nC
Input Capacitance (Ciss) (Max) @ Vds	5800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	2.5 W, 96 W
Rds On (Max) @ Id, Vgs	0.9 mOhm
Supplier Device Package	PG-TDSON-8-7
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

BSC009 Series

Part	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id [Max]	Vgs (Max)	Technology	Supplier Device Package	Power Dissipation (Max)	FET Type	Package / Case	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Power Dissipation (Max)
Infineon Technologies BSC009NE2LSATMA1	5800 pF	41 A	100 A	0.9 mOhm	126 nC	-55 °C	150 °C	25 V	4.5 V 10 V	2.2 V	20 V	MOSFET (Metal Oxide)	PG-TDSON-8-7	2.5 W 96 W	N-Channel	8-PowerTDFN	Surface Mount
Infineon Technologies BSC009N04LSSCATMA1	9520 pF	301 A		1.24 mOhm		-55 °C	175 ░C	40 V	4.5 V 10 V		20 V	MOSFET (Metal Oxide)	PG-WSON-8-2	167 W	N-Channel	8-PowerWDFN	Surface Mount	133 nC	2 V
Infineon Technologies BSC009NE2LS5IATMA1	3200 pF	40 A 100 A		0.95 mOhm	10 V 49 nC	-55 °C	150 °C	25 V	4.5 V 10 V		16 V	MOSFET (Metal Oxide)	PG-TDSON-8-7		N-Channel	8-PowerTDFN	Surface Mount		2 V	2.5 W	74 W
Infineon Technologies BSC009NE2LS5ATMA1	3900 pF	41 A 223 A	100 A	0.9 mOhm	57 nC	-55 °C	150 °C	25 V	4.5 V 10 V		16 V	MOSFET (Metal Oxide)	PG-TDSON-8-7		N-Channel	8-PowerTDFN	Surface Mount		2 V	2.5 W	74 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.51
		10	$ 1.62
		100	$ 1.11
		500	$ 0.89
		1000	$ 0.82
		2000	$ 0.76
	Digi-Reel®	1	$ 2.51
		10	$ 1.62
		100	$ 1.11
		500	$ 0.89
		1000	$ 0.82
		2000	$ 0.76
	Tape & Reel (TR)	5000	$ 0.74
Newark	Each (Supplied on Cut Tape)	1	$ 2.08
		1	$ 2.08
		10	$ 1.38
		10	$ 1.38
		25	$ 1.26
		25	$ 1.26
		50	$ 1.13
		50	$ 1.13
		100	$ 1.01
		100	$ 1.01
		250	$ 0.91
		250	$ 0.91
		500	$ 0.81
		500	$ 0.81
		1000	$ 0.74
		1000	$ 0.74

Description

General part information

BSC009 Series

With the new OptiMOS™ 25V product family, Infineon sets new standards in power density and Energy Efficiency for discrete power MOSFETs. Lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of battery management, or-ing, e-fuse and Hot-swap application. Super-SO8 package has a standard footprint that allows thinner and smaller application solutions compared to the IPB009N03LS.

Documents

Technical documentation and resources

Application Note EN

Datasheet