BSC009N04LSSCATMA1

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Infineon Technologies

OPTIMOS™ 5 POWER MOSFETS 40 V IN SUPERSO8 DSC PACKAGE WITH DUAL-SIDE COOLING FOR ENHANCED THERMAL PERFORMANCE

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BSC009N04LSSCATMA1

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Infineon Technologies

OPTIMOS™ 5 POWER MOSFETS 40 V IN SUPERSO8 DSC PACKAGE WITH DUAL-SIDE COOLING FOR ENHANCED THERMAL PERFORMANCE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BSC009N04LSSCATMA1

Current - Continuous Drain (Id) @ 25°C	301 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	133 nC
Input Capacitance (Ciss) (Max) @ Vds	9520 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	167 W
Rds On (Max) @ Id, Vgs	1.24 mOhm
Supplier Device Package	PG-WSON-8-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

BSC009 Series

Part	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id [Max]	Vgs (Max)	Technology	Supplier Device Package	Power Dissipation (Max)	FET Type	Package / Case	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Power Dissipation (Max)
Infineon Technologies BSC009NE2LSATMA1	5800 pF	41 A	100 A	0.9 mOhm	126 nC	-55 °C	150 °C	25 V	4.5 V 10 V	2.2 V	20 V	MOSFET (Metal Oxide)	PG-TDSON-8-7	2.5 W 96 W	N-Channel	8-PowerTDFN	Surface Mount
Infineon Technologies BSC009N04LSSCATMA1	9520 pF	301 A		1.24 mOhm		-55 °C	175 ░C	40 V	4.5 V 10 V		20 V	MOSFET (Metal Oxide)	PG-WSON-8-2	167 W	N-Channel	8-PowerWDFN	Surface Mount	133 nC	2 V
Infineon Technologies BSC009NE2LS5IATMA1	3200 pF	40 A 100 A		0.95 mOhm	10 V 49 nC	-55 °C	150 °C	25 V	4.5 V 10 V		16 V	MOSFET (Metal Oxide)	PG-TDSON-8-7		N-Channel	8-PowerTDFN	Surface Mount		2 V	2.5 W	74 W
Infineon Technologies BSC009NE2LS5ATMA1	3900 pF	41 A 223 A	100 A	0.9 mOhm	57 nC	-55 °C	150 °C	25 V	4.5 V 10 V		16 V	MOSFET (Metal Oxide)	PG-TDSON-8-7		N-Channel	8-PowerTDFN	Surface Mount		2 V	2.5 W	74 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.73
		10	$ 2.45
		100	$ 1.72
		500	$ 1.40
		1000	$ 1.30
		2000	$ 1.27
	Digi-Reel®	1	$ 3.73
		10	$ 2.45
		100	$ 1.72
		500	$ 1.40
		1000	$ 1.30
		2000	$ 1.27
	Tape & Reel (TR)	4000	$ 1.27
Newark	Each (Supplied on Cut Tape)	1	$ 3.14
		10	$ 2.24
		25	$ 2.01
		50	$ 1.79
		100	$ 1.56
		250	$ 1.41
		500	$ 1.27

Description

General part information

BSC009 Series

OptiMOS™ 5 power MOSFETs 40 VinSuperSO8 DSC (dual-side cooling)package offer all thermal management benefits of dual-side cooling solutions with industry-standard footprint. SuperSO8 DSC allows excellent thermal performance with two paths for heat dissipation (bottom through PCB + top through exposed clip and heatsink). About 30% of the heat generated on the MOSFET die is transferred through the top and less heat is transferred to the PCB. Thus,

Documents

Technical documentation and resources