BSC009 Series

Catalog

OPTIMOS™ N-CHANNEL POWER MOSFET 25 V ; SUPERSO8 5X6 PACKAGE; 0.9 MOHM; WIDE SOA

Part	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id [Max]	Vgs (Max)	Technology	Supplier Device Package	Power Dissipation (Max)	FET Type	Package / Case	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Power Dissipation (Max)
Infineon Technologies BSC009NE2LSATMA1	5800 pF	41 A	100 A	0.9 mOhm	126 nC	-55 °C	150 °C	25 V	4.5 V 10 V	2.2 V	20 V	MOSFET (Metal Oxide)	PG-TDSON-8-7	2.5 W 96 W	N-Channel	8-PowerTDFN	Surface Mount
Infineon Technologies BSC009N04LSSCATMA1	9520 pF	301 A		1.24 mOhm		-55 °C	175 ░C	40 V	4.5 V 10 V		20 V	MOSFET (Metal Oxide)	PG-WSON-8-2	167 W	N-Channel	8-PowerWDFN	Surface Mount	133 nC	2 V
Infineon Technologies BSC009NE2LS5IATMA1	3200 pF	40 A 100 A		0.95 mOhm	10 V 49 nC	-55 °C	150 °C	25 V	4.5 V 10 V		16 V	MOSFET (Metal Oxide)	PG-TDSON-8-7		N-Channel	8-PowerTDFN	Surface Mount		2 V	2.5 W	74 W
Infineon Technologies BSC009NE2LS5ATMA1	3900 pF	41 A 223 A	100 A	0.9 mOhm	57 nC	-55 °C	150 °C	25 V	4.5 V 10 V		16 V	MOSFET (Metal Oxide)	PG-TDSON-8-7		N-Channel	8-PowerTDFN	Surface Mount		2 V	2.5 W	74 W