STP55NF06

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STMicroelectronics

N-CHANNEL 60 V, 0.015 OHM, 50 A STRIPFET(TM) II POWER MOSFET IN TO-220 PACKAGE

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DocumentsDS2157 AN4337 +13

STP55NF06

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STMicroelectronics

N-CHANNEL 60 V, 0.015 OHM, 50 A STRIPFET(TM) II POWER MOSFET IN TO-220 PACKAGE

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DocumentsDS2157 AN4337 +13

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Technical Specifications

Parameters and characteristics for this part

Specification	STP55NF06

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	60 nC
Input Capacitance (Ciss) (Max) @ Vds	1300 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	110 W
Rds On (Max) @ Id, Vgs	18 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

STP55NF06L Series

N-channel 60 V, 0.014 Ohm typ., 35 A StripFET II Power MOSFET in a TO-220 package

Part	Vgs(th) (Max) @ Id	Package / Case	Vgs (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]
STMicroelectronics STP55NF06	4 V	TO-220-3	20 V	60 V	-55 °C	175 ░C	110 W	60 nC	1300 pF	50 A	10 V	N-Channel	TO-220	Through Hole	18 mOhm	MOSFET (Metal Oxide)
STMicroelectronics STP55NF06L	1.7 V	TO-220-3	16 V	60 V	-55 °C	175 ░C	95 W	37 nC	1700 pF	55 A		N-Channel	TO-220	Through Hole	18 mOhm	MOSFET (Metal Oxide)	10 V	5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 1.57
		50	$ 0.81
		100	$ 0.77
		500	$ 0.64
		1000	$ 0.58

Description

General part information

STP55NF06L Series

These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.

Documents

Technical documentation and resources

STP55NF06

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STP55NF06

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Technical Specifications

STP55NF06L Series

Pricing

Description

STP55NF06L Series

Documents

DS2157

AN4337

AN3267

AN4191

TN1225

UM1575

AN4390

TN1224

Datasheet

STP55NF06L Series