STP55NF06L Series

N-channel 60 V, 0.014 Ohm typ., 35 A StripFET II Power MOSFET in a TO-220 package

Catalog

N-channel 60 V, 0.014 Ohm typ., 35 A StripFET II Power MOSFET in a TO-220 package

Part	Vgs(th) (Max) @ Id	Package / Case	Vgs (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]
STMicroelectronics STP55NF06	4 V	TO-220-3	20 V	60 V	-55 °C	175 ░C	110 W	60 nC	1300 pF	50 A	10 V	N-Channel	TO-220	Through Hole	18 mOhm	MOSFET (Metal Oxide)
STMicroelectronics STP55NF06L	1.7 V	TO-220-3	16 V	60 V	-55 °C	175 ░C	95 W	37 nC	1700 pF	55 A		N-Channel	TO-220	Through Hole	18 mOhm	MOSFET (Metal Oxide)	10 V	5 V

Catalog

N-channel 60 V, 0.014 Ohm typ., 35 A StripFET II Power MOSFET in a TO-220 package

Description

These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.