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STP55NF06L - ONSEMI ISL9V3040P3

STP55NF06L

Active
STMicroelectronics

MOSFET TRANSISTOR, N CHANNEL, 55 A, 60 V, 0.014 OHM, 10 V, 1.7 V ROHS COMPLIANT: YES

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DocumentsAN3267+15
STP55NF06L - ONSEMI ISL9V3040P3

STP55NF06L

Active
STMicroelectronics

MOSFET TRANSISTOR, N CHANNEL, 55 A, 60 V, 0.014 OHM, 10 V, 1.7 V ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsAN3267+15

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP55NF06L
Current - Continuous Drain (Id) @ 25°C55 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]37 nC
Input Capacitance (Ciss) (Max) @ Vds1700 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max) [Max]95 W
Rds On (Max) @ Id, Vgs18 mOhm
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)16 V
Vgs(th) (Max) @ Id1.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 1.71
50$ 1.37
100$ 1.13
500$ 0.96
1000$ 0.81
2000$ 0.77
5000$ 0.74
10000$ 0.72
NewarkEach 1$ 1.83
10$ 1.18
100$ 0.94
500$ 0.79
1000$ 0.67
2500$ 0.53
10000$ 0.50

Description

General part information

STP55NF06L Series

These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.