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DMN2990UFB-7B - X2-DFN1006-3

DMN2990UFB-7B

Active
Diodes Inc

MOSFET BVDSS: 8V~24V X1-DFN1006-3 T&R 10K

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DMN2990UFB-7B - X2-DFN1006-3

DMN2990UFB-7B

Active
Diodes Inc

MOSFET BVDSS: 8V~24V X1-DFN1006-3 T&R 10K

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN2990UFB-7B
Current - Continuous Drain (Id) @ 25°C780 mA
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.8 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]0.41 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds31 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case3-UFDFN
Power Dissipation (Max)520 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs [Max]990 mOhm
Supplier Device PackageX1-DFN1006-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.35
10$ 0.24
100$ 0.12
500$ 0.10
1000$ 0.07
2000$ 0.06
5000$ 0.05
Digi-Reel® 1$ 0.35
10$ 0.24
100$ 0.12
500$ 0.10
1000$ 0.07
2000$ 0.06
5000$ 0.05
Tape & Reel (TR) 10000$ 0.05
30000$ 0.04
50000$ 0.04
100000$ 0.04
250000$ 0.03

Description

General part information

DMN2990UFB Series

This new generation 20V N channel enhancement mode MOSFET has been designed to minimise RDS(on)and yet maintain superior switching performance. This device is ideally suited to portable , Battery packing and other power management functions.