DMN2990UFB Series

20V N-Channel Enhancement Mode MOSFET

Catalog

20V N-Channel Enhancement Mode MOSFET

Part	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Technology	Configuration	Power - Max [Max]	FET Feature	Power Dissipation (Max)	Qualification	Grade
Diodes Inc DMN2990UFO-7B	N-Channel	8 V	0.41 nC	1.5 V 4.5 V	31 pF	1 V	20 V	840 mW	990 mOhm	Surface Mount	-55 °C	150 °C	750 mA	X2-DFN0604-3	3-XFDFN	MOSFET (Metal Oxide)
Diodes Inc DMN2990UDJ-7			0.5 nC		27.6 pF	1 V	20 V		990 mOhm	Surface Mount	-55 °C	150 °C	450 mA	SOT-963	SOT-963	MOSFET (Metal Oxide)	2 N-Channel (Dual)	350 mW	Logic Level Gate
Diodes Inc DMN2990UFB-7B	N-Channel	8 V	0.41 nC	1.8 V 4.5 V	31 pF	1 V	20 V		990 mOhm	Surface Mount	-55 °C	150 °C	780 mA	X1-DFN1006-3	3-UFDFN	MOSFET (Metal Oxide)				520 mW	AEC-Q101	Automotive

Catalog

20V N-Channel Enhancement Mode MOSFET

Key Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• Qualified to AEC-Q101 Standards for High Reliability

Description

This new generation 20V N channel enhancement mode MOSFET has been designed to minimise RDS(on)and yet maintain superior switching performance. This device is ideally suited to portable , Battery packing and other power management functions.