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DMN2990UFO-7B - X2-DFN0604-3

DMN2990UFO-7B

Active
Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR,

Deep-Dive with AI

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DMN2990UFO-7B - X2-DFN0604-3

DMN2990UFO-7B

Active
Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR,

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN2990UFO-7B
Current - Continuous Drain (Id) @ 25°C750 mA
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]0.41 nC
Input Capacitance (Ciss) (Max) @ Vds31 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case3-XFDFN
Power Dissipation (Max) [Max]840 mW
Rds On (Max) @ Id, Vgs [Max]990 mOhm
Supplier Device PackageX2-DFN0604-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.44
10$ 0.34
100$ 0.20
500$ 0.19
1000$ 0.13
2000$ 0.12
5000$ 0.11
Digi-Reel® 1$ 0.44
10$ 0.34
100$ 0.20
500$ 0.19
1000$ 0.13
2000$ 0.12
5000$ 0.11
Tape & Reel (TR) 10000$ 0.10
30000$ 0.10
50000$ 0.10

Description

General part information

DMN2990UFB Series

This new generation 20V N channel enhancement mode MOSFET has been designed to minimise RDS(on)and yet maintain superior switching performance. This device is ideally suited to portable , Battery packing and other power management functions.