STB30N80K5

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STMicroelectronics

N-CHANNEL 800 V, 0.15 OHM TYP., 24 A MDMESH K5 POWER MOSFET IN A D2PAK PACKAGE

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STB30N80K5

Active

STMicroelectronics

N-CHANNEL 800 V, 0.15 OHM TYP., 24 A MDMESH K5 POWER MOSFET IN A D2PAK PACKAGE

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Description Specifications Series Pricing CAD Documents

Description

General part information

STB30 Series

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

Technical Specifications

Parameters and characteristics for this part

Specification	STB30N80K5

Current - Continuous Drain (Id) (Tc)	24 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	43 nC
Input Capacitance (Ciss) (Max)	1530 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	TO-263 (D2PAK)
Power Dissipation (Max)	250 W
Rds On (Max)	180 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

STB30 Series

Automotive-grade N-channel 650 V, 102 mOhm typ., 28 A MDmesh DM6 Power MOSFET in a D2PAK package

Part	Power Dissipation (Max)	Vgs (Max)	Rds On (Max)	Technology	Drain to Source Voltage (Vdss)	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max)	Gate Charge (Max)	Mounting Type	Package Name	Package / Case	Input Capacitance (Ciss) (Max)	Grade	Qualification	Operating Temperature
STMicroelectronics STB30N80K5	250 W	30 V	180 mOhm	MOSFET (Metal Oxide)	800 V	N-Channel	-55 °C	150 °C	24 A	10 V	5 V	43 nC	Surface Mount	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1530 pF
STMicroelectronics STB30NF20L	150 W	20 V	75 mOhm	MOSFET (Metal Oxide)	200 V	N-Channel	-55 °C	175 °C	30 A	10 V	3 V	65 nC 65 nC	Surface Mount	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1990 pF	Automotive	AEC-Q101
STMicroelectronics STB30NF10T4	115 W	20 V	45 mOhm	MOSFET (Metal Oxide)	100 V	N-Channel	-55 °C	175 °C	35 A	10 V	4 V	55 nC	Surface Mount	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1180 pF
STMicroelectronics STB30N65M5	140 W	25 V	139 mOhm	MOSFET (Metal Oxide)	650 V	N-Channel			22 A	10 V	5 V	64 nC	Surface Mount	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2880 pF			150 °C
STMicroelectronics STB30N65DM6AG	223 W	25 V	115 mOhm	MOSFET (Metal Oxide)	650 V	N-Channel	-55 °C	150 °C	28 A	10 V	4.75 V	46 nC	Surface Mount	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2000 pF	Automotive	AEC-Q101
STMicroelectronics STB30N65M2AG	190 W	25 V	180 mOhm	MOSFET (Metal Oxide)	650 V	N-Channel	-55 °C	150 °C	20 A	10 V	4 V	30.8 nC 30.8 nC	Surface Mount	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1440 pF	Automotive	AEC-Q101