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STB30N65M2AG - TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STB30N65M2AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 650 V, 0.15 OHM TYP., 20 A MDMESH M2 POWER MOSFET IN A D2PAK PACKAGE

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Search across all available documentation for this part.

DocumentsDatasheetAN5318+24
STB30N65M2AG - TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STB30N65M2AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 650 V, 0.15 OHM TYP., 20 A MDMESH M2 POWER MOSFET IN A D2PAK PACKAGE

Deep-Dive with AI

DocumentsDatasheetAN5318+24

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB30N65M2AG
Current - Continuous Drain (Id) @ 25°C20 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs30.8 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]1440 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]190 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs180 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

STB30N65DM6AG Series

Automotive-grade N-channel 650 V, 102 mOhm typ., 28 A MDmesh DM6 Power MOSFET in a D2PAK package

PartTechnologySupplier Device PackageInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°COperating Temperature [Min]Operating Temperature [Max]Vgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Rds On (Max) @ Id, VgsVgs (Max)Drive Voltage (Max Rds On, Min Rds On)Power Dissipation (Max) [Max]Package / CaseMounting TypeFET TypeGate Charge (Qg) (Max) @ VgsGradeGate Charge (Qg) (Max) @ Vgs [Max]QualificationPower Dissipation (Max)Input Capacitance (Ciss) (Max) @ Vds [Max]
STMicroelectronics
STB30N80K5
MOSFET (Metal Oxide)
TO-263 (D2PAK)
1530 pF
24 A
-55 °C
150 °C
5 V
800 V
180 mOhm
30 V
10 V
250 W
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
Surface Mount
N-Channel
43 nC
STMicroelectronics
STB30NF20L
MOSFET (Metal Oxide)
D2PAK
1990 pF
30 A
-55 °C
175 ░C
3 V
200 V
75 mOhm
20 V
10 V
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
Surface Mount
N-Channel
Automotive
65 nC
AEC-Q101
150 W
STMicroelectronics
STB30N65DM6AG
MOSFET (Metal Oxide)
TO-263 (D2PAK)
2000 pF
28 A
-55 °C
150 °C
4.75 V
650 V
115 mOhm
25 V
10 V
223 W
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
Surface Mount
N-Channel
46 nC
Automotive
AEC-Q101
STMicroelectronics
STB30N65M2AG
MOSFET (Metal Oxide)
TO-263 (D2PAK)
20 A
-55 °C
150 °C
4 V
650 V
180 mOhm
25 V
10 V
190 W
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
Surface Mount
N-Channel
30.8 nC
Automotive
AEC-Q101
1440 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 4.08
10$ 3.42
100$ 2.77
500$ 2.46
Digi-Reel® 1$ 4.08
10$ 3.42
100$ 2.77
500$ 2.46
Tape & Reel (TR) 1000$ 1.90
NewarkEach (Supplied on Cut Tape) 1$ 5.70
10$ 4.43
25$ 4.33
50$ 3.90
100$ 3.46
250$ 3.42
500$ 3.37
1000$ 3.20

Description

General part information

STB30N65DM6AG Series

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.