STB30N65DM6AG

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STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 650 V, 102 MOHM TYP., 28 A MDMESH DM6 POWER MOSFET IN A D2PAK PACKAGE

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STB30N65DM6AG

Active

STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 650 V, 102 MOHM TYP., 28 A MDMESH DM6 POWER MOSFET IN A D2PAK PACKAGE

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DocumentsTechnical Data Sheet EN Datasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STB30N65DM6AG

Current - Continuous Drain (Id) @ 25°C	28 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	46 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	223 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	115 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4.75 V

STB30N65DM6AG Series

Automotive-grade N-channel 650 V, 102 mOhm typ., 28 A MDmesh DM6 Power MOSFET in a D2PAK package

Part	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Package / Case	Mounting Type	FET Type	Gate Charge (Qg) (Max) @ Vgs	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Qualification	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]
STMicroelectronics STB30N80K5	MOSFET (Metal Oxide)	TO-263 (D2PAK)	1530 pF	24 A	-55 °C	150 °C	5 V	800 V	180 mOhm	30 V	10 V	250 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	N-Channel	43 nC
STMicroelectronics STB30NF20L	MOSFET (Metal Oxide)	D2PAK	1990 pF	30 A	-55 °C	175 ░C	3 V	200 V	75 mOhm	20 V	10 V		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	N-Channel		Automotive	65 nC	AEC-Q101	150 W
STMicroelectronics STB30N65DM6AG	MOSFET (Metal Oxide)	TO-263 (D2PAK)	2000 pF	28 A	-55 °C	150 °C	4.75 V	650 V	115 mOhm	25 V	10 V	223 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	N-Channel	46 nC	Automotive		AEC-Q101
STMicroelectronics STB30N65M2AG	MOSFET (Metal Oxide)	TO-263 (D2PAK)		20 A	-55 °C	150 °C	4 V	650 V	180 mOhm	25 V	10 V	190 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	N-Channel	30.8 nC	Automotive		AEC-Q101		1440 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 6.22
		10	$ 4.39
		100	$ 3.61
	Digi-Reel®	1	$ 6.22
		10	$ 4.39
		100	$ 3.61
	Tape & Reel (TR)	1000	$ 2.95
Newark	Each (Supplied on Cut Tape)	1	$ 7.67
		10	$ 5.87
		25	$ 5.52
		50	$ 5.16
		100	$ 4.81
		250	$ 4.80
		500	$ 4.52
		1000	$ 4.51

Description

General part information

STB30N65DM6AG Series

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet